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| 2SK1277 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 250V 0,12 30A 150W > Outline Drawing > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 250 30 120 30 20 150 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=250V Tch=25C VGS=0V VGS=20V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=30A VGS=10V RGS=25 IF=IDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 250 2,1 Typ. 3,0 10 10 0,09 20 2400 500 280 35 140 420 180 0,9 100 Max. 4,0 500 100 0,12 3600 750 420 50 210 630 270 1,8 150 Unit V V A nA S pF pF pF ns ns ns ns V ns 10 - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 0,83 Unit C/W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 250V 0,12 2SK1277 F-V Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 30A 150W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(ON) [] 44 gfs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9 VDS [V] Qg [nC] VSD [V] Allowable Power Dissipation vs. TC Safe operation area Zth(ch-c) [K/W] Transient Thermal impedance PD [W] 10 ID [A] 12 11 Tc [C] VDS [V] t [s] This specification is subject to change without notice! |
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